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High Speed Optical Detector, UV-Si, 3 ns, Ø2.55 mm, 193-1100 nm
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In Stock


  • Product Name
  • Sensor Type
  • Rise Time/Fall Time
    3 ns
  • Spectral Range
    193-1100 nm
  • Active Area Diameter
    2.55 mm
  • Noise Equivalent Power
    <0.10 pW/√Hz
  • Detector Area
    5.11 mm²
  • Wavelength of Peak Sensitivity
    890 nm
  • Responsivity at Peak Wavelength
    0.58 A/W
  • Responsivity (Irradiance) at Peak Wavelength
    1.5 V/(W/cm²)
  • Bias Voltage
    24 VDC
  • Bias Voltage Source
  • Bandwidth
    118 MHz
  • Dark Current
    <10 nA
  • Maximum Average Power
    15 mW
  • Mounting (Tapped Holes)
    8-32 & M4
  • Output Connector
  • Accessory Thread
  • Dimensions
    54 x 34 x 40 mm (LxWxD)
  • CE Compliance
  • UKCA Compliance
  • China RoHS Compliance


Pulse Characterization Sensor Overview

Using these Ophir fast photodetectors, you can see and measure the temporal characteristics of pulsed and CW laser beams.

Fast Photodiode Spectral Responsivity

Responsivity is defined as the produced photocurrent (in Amperes) per Watt of incident radiation. It is a function of wavelength. Hence, the spectral response of the photodiode should be as high as possible at the wavelength of the laser to be measured. The spectral responsivities of the FPD series are shown in the figure. Ophir offers several fast photodiodes models with Silicon photodiodes having spectral response from 320 nm to 1100 nm, UV enhanced Silicon with extended response from 193 nm to 1100 nm, and InGaAs photodiodes which are sensitive from 900 nm to 1700 nm.

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